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B3965D N- and P-Channel 40-V (D-S) MOSFET

B3965D Description

B3965D N- and P-Channel 40-V (D-S) MOSFET General .
The B3965D is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

B3965D Features

* 40V/5.2A, RDS(ON)=40mΩ@VGS=10V (N-Ch) 40V/4.9A, RDS(ON)=45mΩ@VGS=4.5V (N-Ch) -40V/-4.5A, RDS(ON)=54mΩ@VGS=-10V (P-Ch) -40V/-3.9A, RDS(ON)=72mΩ@VGS=-4.5V (P-Ch) Super High Density Cell Design For Extremely Low RDS(ON) Exceptional On-Resistance and Maximum DC Current Capability TO-252 Package Applicat

B3965D Applications

* Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch LCD Display inverter ℃Absolute Maximum Ratings (TA=25 Unless Otherwise Noted): Parameter Drain-Source Voltage Gate-Source Voltage ℃Continuous Drain Current(tJ=150 ) ℃TA=25 ℃TA=70 Pulsed Drain Cu

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Datasheet Details

Part number
B3965D
Manufacturer
BiTEK
File Size
59.65 KB
Datasheet
B3965D-BiTEK.pdf
Description
N- and P-Channel 40-V (D-S) MOSFET

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and P-Channel 40-V D-S MOSFET BiTEK
BiTEK B3965D-like datasheet