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BIDNW30N60H3

Insulated Gate Bipolar Transistor

Image Manufacturer P/N B2B MPN Description Distributor Stock Quantity Price Buy Now
Distributor Bourns Inc BIDNW30N60H3 BIDNW30N60H3 IGBT TRENCH FS 600V 60A TO-247N DigiKey 2740 510 units
$1.75

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Part number:

BIDNW30N60H3

Manufacturer:

Bourns

File Size:

1.25 MB

Description:

Insulated gate bipolar transistor.
Features n 600 V, 30 A, Low Collector-Emitter Saturation Voltage (VCE(sat)) n Trench-Gate Field-Stop.
technology n Low switching loss n Fast switching n RoHS compliant* Applications n Switch-Mode Powe.

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BIDNW30N60H3 Insulated Gate Bipolar Transistor Bourns

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