Datasheet Specifications
- Part number
- BIDNW30N60H3
- Manufacturer
- Bourns
- File Size
- 1.25 MB
- Datasheet
- BIDNW30N60H3-Bourns.pdf
- Description
- Insulated Gate Bipolar Transistor
Description
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Features
* n 600 V, 30 A, Low Collector-Emitter Saturation Voltage (VCE(sat)) n Trench-Gate Field-Stop technology n Low switching loss n Fast switching n RoHS compliantApplications
* n Switch-Mode Power Supplies (SMPS) n Uninterruptible Power Sources (UPS) n Power Factor Correction (PFC) n Induction heating BIDNW30N60H3 Insulated Gate Bipolar Transistor (IGBT) General Information The Bourns® Model BIDNW30N60H3 IGBT device combines technology from a MOS gate and a bipolar transBIDNW30N60H3 Distributors
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