Part number:
BIDNW30N60H3
Manufacturer:
Bourns
File Size:
1.25 MB
Description:
Insulated gate bipolar transistor.
BIDNW30N60H3 Datasheet (1.25 MB)
* n 600 V, 30 A, Low Collector-Emitter Saturation Voltage (VCE(sat)) n Trench-Gate Field-Stop technology n Low switching loss n Fast switching n RoHS compliant
* Applications n Switch-Mode Power Supplies (SMPS) n Uninterruptible Power Sources (UPS) n Power Factor Correction (PFC) n Induction heati
BIDNW30N60H3 Datasheet (1.25 MB)
BIDNW30N60H3
Bourns
1.25 MB
Insulated gate bipolar transistor.
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