BIDW50N65T Datasheet - Bourns

Insulated Gate Bipolar Transistor

* n 650 V, 50 A, Low Collector-Emitter Saturation Voltage (VCE(sat)) n Trench-Gate Field-Stop technology n Optimized for conduction n RoHS compliant

* Applications n Switch-Mode Power Supplies (SMPS) n Uninterruptible Power Sources (UPS) n Power Factor Correction (PFC) n Inverters BIDW50N65T Insu

BIDW50N65T

Bourns

1.13 MB

Insulated gate bipolar transistor.

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BIDW50N65T Insulated Gate Bipolar Transistor Bourns

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