BIDW50N65T

Insulated Gate Bipolar Transistor

Bourns

Image	Manufacturer	Part Number	B2B mpn	Description	Distributor	Stock	Quantity	Price	Buy Now
	Bourns Inc	BIDW50N65T	BIDW50N65T	IGBT TRENCH FS 650V 100A TO-247	DigiKey	2853	120 units	$2.5	🛒 Buy Now

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Datasheet Details

Part number:

BIDW50N65T

Manufacturer:

Bourns

File Size:

1.13 MB

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Description:

Insulated gate bipolar transistor.
Features n 650 V, 50 A, Low Collector-Emitter Saturation Voltage (VCE(sat)) n Trench-Gate Field-Stop.
technology n Optimized for conduction n RoHS compliant* Applications n Switch-Mode Power Supplies .

✔ BIDW50N65T Features

n 650 V, 50 A, Low Collector-Emitter Saturation Voltage (VCE(sat)) n Trench-Gate Field-Stop technology n Optimized for conduction n RoHS compliant
Applications n Switch

✔ BIDW50N65T Application

n Switch-Mode Power Supplies (SMPS) n Uninterruptible Power Sources (UPS) n Power Factor Correction (PFC) n

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BIDW50N65T Insulated Gate Bipolar Transistor Bourns

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