Datasheet Specifications
- Part number
- BIDW50N65T
- Manufacturer
- Bourns
- File Size
- 1.13 MB
- Datasheet
- BIDW50N65T-Bourns.pdf
- Description
- Insulated Gate Bipolar Transistor
Description
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Features
* n 650 V, 50 A, Low Collector-Emitter Saturation Voltage (VCE(sat)) n Trench-Gate Field-Stop technology n Optimized for conduction n RoHS compliantApplications
* n Switch-Mode Power Supplies (SMPS) n Uninterruptible Power Sources (UPS) n Power Factor Correction (PFC) n Inverters BIDW50N65T Insulated Gate Bipolar Transistor (IGBT) General Information The Bourns® Model BIDW50N65T IGBT device combines technology from a MOS gate and a bipolar transistor for anBIDW50N65T Distributors
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