BS616LV2016 Datasheet, Sram, Brilliance Semiconductor

BS616LV2016 Features

• Sram Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 30mA (Max.) at 55ns 2mA (Max.) at 1MHz Standby current : 0.1uA (Typ.) at 25 OC V

PDF File Details

Part number:

BS616LV2016

Manufacturer:

Brilliance Semiconductor

File Size:

207.46kb

Download:

📄 Datasheet

Description:

Very low power cmos sram. The BS616LV2016 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 by 16 bits and operates f

TAGS

BS616LV2016

Brilliance Semiconductor

📁 Related Datasheet

BS616LV2010 - Very Low Power/Voltage CMOS SRAM 128K X 16 bit (Brilliance Semiconductor)
BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 128K X 16 bit „ DESCRIPTION BS616LV2010 • Very low operation voltage : 2.7 ~ 3.6V • Very low power .

BS616LV2011 - Very Low Power/Voltage CMOS SRAM 128K X 16 bit (Brilliance Semiconductor)
BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 128K X 16 bit „ DESCRIPTION BS616LV2011 • Very low operation voltage : 2.4 ~ 5.5V • Very low power .

BS616LV2012 - Very Low Power/Voltage CMOS SRAM (Brilliance Semiconductor)
BSI Very Low Power/Voltage CMOS SRAM 128K X 16 bit BS616LV2012 „ FEATURES • Very low operation voltage : 2.7 ~ 3.6V • Very low power consumption : .

BS616LV2013 - Very Low Power/Voltage CMOS SRAM 128K X 16 bit (Brilliance Semiconductor)
B SI „ FEATURES Very Low Power/Voltage CMOS SRAM 128K X 16 bit „ DESCRIPTION BS616LV2013 • Very low operation voltage : 2.4 ~ 3.6V • Very low power.

BS616LV2015 - Very Low Power/Voltage CMOS SRAM 128K X 16 bit (Brilliance Semiconductor)
BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 128K X 16 bit „ DESCRIPTION BS616LV2015 • Very low operation voltage : 4.5 ~ 5.5V • Very low power .

BS616LV2018 - Very Low Power/Voltage CMOS SRAM 128K X 16 bit (Brilliance Semiconductor)
BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 128K X 16 bit „ DESCRIPTION BS616LV2018 • Very low operation voltage : 2.4 ~ 3.6V • Very low power .

BS616LV2020 - Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable (Brilliance Semiconductor)
BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable „ DESCRIPTION BS616LV2020 • Very low operation voltage : 2.7 ~.

BS616LV2021 - Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable (Brilliance Semiconductor)
BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable „ DESCRIPTION BS616LV2021 • Very low operation voltage : 2.4 ~.

BS616LV2023 - Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable (Brilliance Semiconductor)
BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable „ DESCRIPTION BS616LV2023 • Very low operation voltage : 2.4 ~.

BS616LV2025 - Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable (Brilliance Semiconductor)
BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable „ DESCRIPTION BS616LV2025 • Very low operation voltage : 4.5 ~.