BS616LV2016 Very Low Power CMOS SRAM

Brilliance Semiconductor

Description

Very Low Power CMOS SRAM 128K X 16 bit Pb-Free and Green package materials are compliant to RoHS BS616LV2016 n .
The BS616LV2016 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 by 16 bits and operates form a wide range.

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Datasheet Specifications

Part number: BS616LV2016
Manufacturer: Brilliance Semiconductor
File Size: 207.46 KB
Datasheet: BS616LV2016-BrillianceSemiconductor.pdf
Description: Very Low Power CMOS SRAM

Features

* Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 30mA (Max. ) at 55ns 2mA (Max. ) at 1MHz Standby current : 0.1uA (Typ. ) at 25 OC VCC = 5.0V Operation current : 62mA (Max. ) at 55ns 8mA (Max. ) at 1MHz Standby current : 0.6uA (Typ. ) at 25OC Ÿ High

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Very Low Power CMOS SRAM Brilliance Semiconductor

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