MSF8N80-G Datasheet - Bruckewell Technology

MSF8N80-G, 800V N-Channel MOSFET

MSF8N80-G 800V N-Channel MOSFET GENERAL .
This Power MOSFET is produced using the advanced planar stripe, DMOS technology.

Features

* RDS(on) (typ 1.3 Ω )@VGS=10V
* Gate Charge (Typical 39nC)
* Improved dv/dt Capability, High Ruggedness
* 100% Avalanche Tested
* Maximum Junction Temperature Range (150°C)
* Halogen Free Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt

Applications

* are based on Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particul

MSF8N80-G-BruckewellTechnology.pdf