MSF8N80-G - 800V N-Channel MOSFET

Bruckewell Technology

Datasheet Details

This Power MOSFET is produced using the advanced planar stripe, DMOS technology.

RDS(on) (typ 1.3 Ω )@VGS=10V.
Gate Charge (Typical 39nC).
Improved dv/dt Capability, High Ruggedness.
100% Avalanche Tested.
Maximum Junction Temperature Range (150°C).
Halogen Free Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ,TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current (Tc=25°C unless otherwise specified) Parameter Value 800 8 5.0 32 ±30 850 17.8 4.5 59 - Derate above 25℃ 0.48.
55.

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Published: May 26, 2014 |