MS67C10 Datasheet (Bruckewell) - N&P-Channel MOSFET

MS67C10, N&P-Channel MOSFET

These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mod

MS67C10 Features

* Fast switching

* Green Device Available

* Suit for 4.5V Gate Drive Applications Applications

* DC Fan

* Motor Drive Applications

* Networking

* Half / Full Bridge Topology Packing & Order Information 3,000/Reel SO-8 Package information Grap