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MS9N20E Dual N-Channel MOSFET

MS9N20E Description

MS9N20E Dual N-Channel 20-V (D-S) MOSFET .
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat diss.

MS9N20E Features

* Low rDS(on) provides higher efficiency and extends battery life
* Low thermal impedance copper leadframe
* DFN2X5 6PP saves board space
* Fast switching speed
* High performance trench technology Packing & Order Information 3,000/Reel Graphic symbol Publica

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Datasheet Details

Part number
MS9N20E
Manufacturer
Bruckewell
File Size
625.66 KB
Datasheet
MS9N20E-Bruckewell.pdf
Description
Dual N-Channel MOSFET

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Bruckewell MS9N20E-like datasheet