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CS2312 N-Channel Trench Power MOSFET

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Description

N-Channel Trench Power MOSFET General .
The CS2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number
CS2312
Manufacturer
CASS
File Size
618.65 KB
Datasheet
CS2312-CASS.pdf
Description
N-Channel Trench Power MOSFET

Features

* VDS = 20V,ID =5A RDS(ON) < 26mΩ @ VGS =4.5V RDS(ON) < 34mΩ @ VGS =2.5V
* High Power and current handing capability
* Lead free product is acquired

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