CS2609

N- & P-Channel Trench Power MOSFET

* VDS = 20V,ID =2.5A RDS(ON) < 70mΩ @ VGS =4.5V RDS(ON) < 130mΩ @ VGS =2.5V

* VDS = -20V,ID =-2.5A RDS(ON) < 160mΩ @ VGS =-4.5V RDS(ON) < 240mΩ @ VGS =-2.5V

* Super high dense cell design for extremely low RDS(ON)

* High Power and current handing capability

* Lead free product is

CS2609

CASS

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N- & p-channel trench power mosfet.

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CS2609 P-Channel Trench Power MOSFET CASS

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