CS2609 N- & P-Channel Trench Power MOSFET

Description

CS2609 Dual Enhancement Mode Field Effect Transistor (N and P Channel) .

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Datasheet Specifications

Part number: CS2609
Manufacturer: CASS
File Size: 543.71 KB
Datasheet: CS2609-CASS.pdf
Description: N- & P-Channel Trench Power MOSFET

Features

* VDS = 20V,ID =2.5A RDS(ON) < 70mΩ @ VGS =4.5V RDS(ON) < 130mΩ @ VGS =2.5V
* VDS = -20V,ID =-2.5A RDS(ON) < 160mΩ @ VGS =-4.5V RDS(ON) < 240mΩ @ VGS =-2.5V
* Super high dense cell design for extremely low RDS(ON)
* High Power and current handing capability
* Lead free product is

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CS2609 P-Channel Trench Power MOSFET CASS

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