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CSP30N75 N-Channel Trench Power MOSFET

CSP30N75 Description

N-Channel Trench Power MOSFET General .
The CSP30N75 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.

CSP30N75 Features

* VDS = 30V,ID =12A RDS(ON) < 11 mΩ @ VGS =10V RDS(ON) < 16 mΩ @ VGS =4.5V
* High density cell design for ultra low Rdson

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Datasheet Details

Part number
CSP30N75
Manufacturer
CASS
File Size
527.65 KB
Datasheet
CSP30N75-CASS.pdf
Description
N-Channel Trench Power MOSFET

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N-Channel Trench Power MOSFET CASS
CASS CSP30N75-like datasheet