CSP30N75 Datasheet, Mosfet, CASS

CSP30N75 Features

• Mosfet
• VDS = 30V,ID =12A RDS(ON) < 11 mΩ @ VGS =10V RDS(ON) < 16 mΩ @ VGS =4.5V
• High density cell design for ultra low Rdson
• Lead free product is acquired Applica

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Part number:

CSP30N75

Manufacturer:

CASS

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527.65kb

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📄 Datasheet

Description:

N-channel trench power mosfet. The CSP30N75 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as

CSP30N75 Application

• Applications Features
• VDS = 30V,ID =12A RDS(ON) < 11 mΩ @ VGS =10V RDS(ON) < 16 mΩ @ VGS =4.5V
• High density cell design for ult

TAGS

CSP30N75

CASS

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