2N657 Datasheet, Transistor, CDIL

PDF File Details

Part number:

2N657

Manufacturer:

CDIL

File Size:

130.34kb

Download:

📄 Datasheet

Description:

Npn silicon planar transistor. SYMBOL VALUE Collector Emitter Voltage VCEO 100 Collector Base Voltage VCBO 100 Emitter Base Voltage VEBO 8.0 Collector C

2N657 Application

• Applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous impro

TAGS

2N657

CDIL

📁 Related Datasheet

2N65 - 650V N-Channel Power MOSFET (JINAN JINGHENG)
R SEMICONDUCTOR 2N65 650V N-Channel Power MOSFET FEATURES ● RDS(ON)<4.4Ω @ VGS=10V,ID=1A ● Fast switching capability ● Lead free in pliance with .

2N65 - N-CHANNEL POWER MOSFET (GME)
Production specification 2A, 650 Volts N-CHANNEL POWER MOSFET FEATURES z RDS(on)=5.0Ω@VGS=10V. Pb z Ultra Low gate charge (typical 9.0nC) Lead-fr.

2N65 - N-Channel MOSFET Transistor (Inchange Semiconductor)
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N65 ·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage-.

2N65 - 650V N-CHANNEL POWER MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 2N65 Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET 1 TO-220 1 1 TO-220F TO-220F1  DESCRIPTION The UTC 2N65 is a.

2N65-C - N-CHANNEL POWER MOSFET (Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD 2N65-C 2A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N65-C is a high voltage power MOSFET and is designed to h.

2N65-CB - N-CHANNEL MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 2N65-CB 2A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N65-CB is a high voltage power MOSFET and is designed to.

2N65-TC - 650V N-CHANNEL POWER MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 2N65-TC 2A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N65-TC is a N-channel mode power MOSFET using UTC’s adva.

2N650 - PNP Transistor (Motorola)
2N650A, 2N650 (GERMANIUM) 2N651 A, 2N651 2N652A, 2N652 GERMANIUM PNP MILLIWATT TRANSISTORS · .. designed primarily for low·power audio amplifier and .

2N6500 - HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS (ETC)
.

2N6500 - Bipolar NPN Device (Seme LAB)
2N6500 Dimensions in mm (inches). 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) Bipolar NPN Device in a Herm.