2N6574
Seme LAB
44.25 KB
Bipolar npn device.
2N6574
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN.
📁 Related Datasheet
2N657 - NPN Transistor
(Motorola)
2N656 (SILICON) 2N657
NPN SILICON ANNULAR TRANSISTORS
. NPN silicon annular transistor designed for small-signal amplifier and general purpose switch.
2N657 - NPN SILICON PLANAR TRANSISTOR
(CDIL)
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR TRANSISTOR
2N657
TO-39 Metal Can Package
General P.
2N6573 - Nipolar NPN Device
(Semelab Plc)
2N6573
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN.
2N6573 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO = 250V(Min.) ·Fast Switching Speed ·High Current Capabilit.
2N6574 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO = 275V(Min.) ·Fast Switching Speed ·High Current Capabilit.
2N6575 - Bipolar NPN Device
(Seme LAB)
2N6575
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN.
2N6575 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO = 300V(Min.) ·Fast Switching Speed ·High Current Capabilit.
2N6576 - 15 AMPERE NPN DARLINGTON
(General Semiconductor)
.
