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2N657, 2N656 NPN Transistor

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Description

2N656 (SILICON) 2N657 NPN SILICON ANNULAR TRANSISTORS .NPN silicon annular transistor designed for small-signal amplifier and general purpose switch.

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This datasheet PDF includes multiple part numbers: 2N657, 2N656. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number
2N657, 2N656
Manufacturer
Motorola
File Size
58.33 KB
Datasheet
2N656-Motorola.pdf
Description
NPN Transistor
Note
This datasheet PDF includes multiple part numbers: 2N657, 2N656.
Please refer to the document for exact specifications by model.

Applications

* High Collector
* Emitter Breakdown Voltage - BVCEO = 100 Vde (Min) @ IC = 250 !lAde - 2N657
* High Emitter-Base Breakdown Voltage - BVEBO = 8.0 Vde (Min) @ IE = 250 !lAde NPN SILICON ANNULAR TRAN~STORS
* MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltag

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