2N657 Datasheet - Motorola

2N657 NPN Transistor

2N656 (SILICON) 2N657 NPN SILICON ANNULAR TRANSISTORS . NPN silicon annular transistor designed for small-signal amplifier and general purpose switching applications. High Collector Emitter Breakdown Voltage - BVCEO = 100 Vde (Min) @ IC = 250 !lAde - 2N657 High Emitter-Base Breakdown Voltage - BVEBO = 8.0 Vde (Min) @ IE = 250 !lAde NPN SILICON ANNULAR TRAN~STORS MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Devi.

2N657 Datasheet (58.33 KB)

2N657 Datasheet Preview — Preview of 2N657 PDF

Datasheet Details

Part number:

2N657

Manufacturer:

Motorola

File Size:

58.33 KB

Description:

Npn transistor.

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2N657 NPN Transistor Motorola

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