| Part number | BCW89 |
|---|---|
| Datasheet | BCW89-CDIL.pdf |
| File Size | 173.01 KB |
| Manufacturer | Continental Device India |
| Description | SILICON PLANAR EPITAXIAL TRANSISTORS |
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current gain at Tj = 25 °C IC = 2 mA; VCE = 5 V Transition frequency at f: VCE = 5 V Noise figure at RS = 2 kW IC = 200 mA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BCW89 | PNP General Purpose Transistors | Kexin |
 |
BCW89 | PNP general purpose transistor | NXP |
 |
BCW89 | PNP General Purpose Amplifier | Fairchild Semiconductor |
 |
BCW89 | EPITAXIAL PLANAR PNP TRANSISTOR | KEC |
 |
BCW89 | SILICON PNP TRANSISTORS | Central Semiconductor |
See all Continental Device India datasheets
| Part Number | Description |
|---|---|
| BCW29 | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BCW30 | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BCW60A | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BCW60B | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BCW60C | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BCW60D | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BCW61A | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BCW61B | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BCW61C | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BCW61D | SILICON PLANAR EPITAXIAL TRANSISTORS |
