BCW89
BCW89 is SILICON PLANAR EPITAXIAL TRANSISTORS manufactured by Continental Device India.
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified pany
SOT-23 Formed SMD Package
SILICON PLANAR EPITAXIAL TRANSISTORS
P- N- P transistors
Marking BCW89 = H3
Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
ABSOLUTE MAXIMUM RATINGS Collector- base voltage (open emitter) Collector- emitter voltage (open base) Collector current (peak value) Total power dissipation up to Tamb = 25 °C Junction temperature D.C. current gain at Tj = 25 °C
- IC = 2 m A;
- VCE = 5 V Transition frequency at f: 35 MHz
- IC = 10 m A;
- VCE = 5 V Noise figure at RS = 2 k W
- IC = 200 m A;
- VCE = 5 V; f = 1 k Hz; B = 200 Hz
- VCB0 max.
- VCE0 max.
- ICM max. Ptot max. Tj max.
> h FE <
80 V 60 V 200 m A 250 m W 150 ° C 120 260 f T typ. 150 MHz
F < 10 d B
Continental Device India Limited
Data Sheet
Page 1 of 4
RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector- base voltage (open emitter) Collector- emitter...
