BCW89 - SILICON PLANAR EPITAXIAL TRANSISTORS

CDIL

Datasheet Details

Part number	BCW89
Manufacturer	CDIL
File Size	173.01 KB
Description	SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet	BCW89 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
BCW89	PNP General Purpose Transistors	Kexin
BCW89	PNP general purpose transistor	NXP
BCW89	PNP General Purpose Amplifier	Fairchild Semiconductor
BCW89	EPITAXIAL PLANAR PNP TRANSISTOR	KEC
BCW89	SILICON PNP TRANSISTORS	Central Semiconductor

Other Datasheets by CDIL

Part Number	Description
BCW29	SILICON PLANAR EPITAXIAL TRANSISTORS
BCW30	SILICON PLANAR EPITAXIAL TRANSISTORS
BCW60A	SILICON PLANAR EPITAXIAL TRANSISTORS
BCW60B	SILICON PLANAR EPITAXIAL TRANSISTORS
BCW60C	SILICON PLANAR EPITAXIAL TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW89 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCW89 = H3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Collector current (peak value) Total power dissipation up to Tamb = 25 °C Junction temperature D.C. current gain at Tj = 25 °C –IC = 2 mA; —VCE = 5 V Transition frequency at f: 35 MHz –IC = 10 mA; –VCE = 5 V Noise figure at RS = 2 kW –IC = 200 mA; –VCE = 5 V; f = 1 kHz; B = 200 Hz –VCB0 max. –VCE0 max. –ICM max. Ptot max. Tj max. > hFE < 80 V 60 V 200 mA 250 mW 150 ° C 120 260 fT typ.