BCW89 Description
current gain at Tj = 25 °C IC = 2 mA; VCE = 5 V Transition frequency at f: VCE = 5 V Noise figure at RS = 2 kW IC = 200 mA;.
BCW89 is SILICON PLANAR EPITAXIAL TRANSISTORS manufactured by Continental Device India.
| Manufacturer | Part Number | Description |
|---|---|---|
Kexin Semiconductor |
BCW89 | PNP General Purpose Transistors |
NXP Semiconductors |
BCW89 | PNP general purpose transistor |
Fairchild |
BCW89 | PNP General Purpose Amplifier |
KEC |
BCW89 | EPITAXIAL PLANAR PNP TRANSISTOR |
Central Semiconductor |
BCW89 | SILICON PNP TRANSISTORS |
current gain at Tj = 25 °C IC = 2 mA; VCE = 5 V Transition frequency at f: VCE = 5 V Noise figure at RS = 2 kW IC = 200 mA;.