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CTZ5.6 Datasheet - CDIL

HIGH SPEED SILICON SWITCHING DIODE

CTZ5.6 General Description

SYMBOL VALUE Power Dissipation @TA=25ºC PTA 500 PS Surge Power Dissipation 5 tp=8.3mS TJ Junction Temperature 175 Tstg Storage Temperature -65 to+175 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL Rth(j-a) Thermal Resistance Junction Ambient Forward Voltage at IF=.

CTZ5.6 Datasheet (245.09 KB)

Preview of CTZ5.6 PDF

Datasheet Details

Part number:

CTZ5.6

Manufacturer:

CDIL

File Size:

245.09 KB

Description:

High speed silicon switching diode.
www.DataSheet4U.com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company HIGH SPEED SILICON SWITCHING DIODE AX.

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CTZ5.6 HIGH SPEED SILICON SWITCHING DIODE CDIL

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