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MJE13002 - (MJE13002 / MJE13003) NPN EPITAXIAL SILICON POWER TRANSISTORS

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Part number MJE13002
Manufacturer CDIL
File Size 167.29 KB
Description (MJE13002 / MJE13003) NPN EPITAXIAL SILICON POWER TRANSISTORS
Datasheet download datasheet MJE13002 Datasheet
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Description

Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Peak Base Current Continuous Peak Emitter Current Continuous Peak Total Power Dissipation @ Ta=25ºC Derate Above 25ºC Total Power Dissipation @ TC=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case Rth (j-c) 3.12 89 275 ºC/W ºC/W ºC Rth (j-a) Junction to Ambient in free air Maximum Load Temperature for TL Soldering Purposes 1/8" from Case

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