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CEA6861 Datasheet - CET

CEA6861 P-Channel Enhancement Mode Field Effect Transistor

CEA6861 Features

* -60V, -2.4A, RDS(ON) = 135mΩ @VGS = -10V. RDS(ON) = 180mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-89 package. D D S D G SOT-89 G S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Cur

CEA6861_CET.pdf

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Datasheet Details

Part number:

CEA6861

Manufacturer:

CET

File Size:

255.74 KB

Description:

P-channel enhancement mode field effect transistor.

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CEA6861 CEA6861 P-Channel Enhancement Mode Field Effect Transistor CET

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