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CEA6861 P-Channel Enhancement Mode Field Effect Transistor

CEA6861 Description

CEA6861 P-Channel Enhancement Mode Field Effect Transistor .

CEA6861 Features

* -60V, -2.4A, RDS(ON) = 135mΩ @VGS = -10V. RDS(ON) = 180mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-89 package. D D S D G SOT-89 G S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Cur

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Datasheet Details

Part number
CEA6861
Manufacturer
CET
File Size
255.74 KB
Datasheet
CEA6861_CET.pdf
Description
P-Channel Enhancement Mode Field Effect Transistor

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