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CEA3055L, CEA3055L_Chino N-Channel Enhancement Mode Field Effect Transistor

CEA3055L Description

CEA3055L N-Channel Enhancement Mode Field Effect Transistor .

CEA3055L Features

* 60V, 3.7A, RDS(ON) = 100mΩ @VGS = 10V. RDS(ON) = 120mΩ @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-89 package. D D SOT-89 S D G G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Dr

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: CEA3055L, CEA3055L_Chino. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
CEA3055L, CEA3055L_Chino
Manufacturer
Chino-Excel Technology
File Size
60.38 KB
Datasheet
CEA3055L_Chino-ExcelTechnology.pdf
Description
N-Channel Enhancement Mode Field Effect Transistor
Note
This datasheet PDF includes multiple part numbers: CEA3055L, CEA3055L_Chino.
Please refer to the document for exact specifications by model.

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N-Channel Enhancement Mode Field Effect Transistor Chino-Excel Technology
Chino-Excel Technology CEA3055L-like datasheet