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CEB16N10L N-Channel MOSFET

CEB16N10L Description

CEP16N10L/CEB16N10L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY .

CEB16N10L Features

* 100V, 15.2A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE

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Datasheet Details

Part number
CEB16N10L
Manufacturer
CET
File Size
365.84 KB
Datasheet
CEB16N10L-CET.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET CET
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