CEB3060 - N-Channel MOSFET

Datasheet Details

30V, 105A,RDS(ON) = 6mΩ @VGS = 10V. RDS(ON) = 8mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S.

📁 CEB3060 Similar Datasheet

CEB1012 - N-Channel Enhancement Mode Field Transistor (Chino-Excel Technology)
CEB1012L - N-Channel Enhancement Mode Field Transistor (Chino-Excel Technology)
CEB16N10L - N-Channel MOSFET (VBsemi)
CEB4050A - N-Channel Enhancement Mode Field Transistor (Chino-Excel Technology)
CEB4050AL - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEB4060 - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEB4060A - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEB4060AL - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)

Other Datasheets by CET

Published: Sep 22, 2015 |