CEB45N10 - N-Channel MOSFET

CET

Datasheet Details

100V, 44A, RDS(ON) = 39mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S.

📁 CEB45N10 Similar Datasheet

CEB4050A - N-Channel Enhancement Mode Field Transistor (Chino-Excel Technology)
CEB4050AL - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEB4060 - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEB4060A - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEB4060AL - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEB4060AR - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEB4060L - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEB4069ALR - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)

Other Datasheets by CET

Published: Feb 9, 2016 |