CEB02N6 Datasheet - CET

CEB02N6 N-Channel MOSFET

CEP02N6/CEB02N6 4 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter DYNAMIC CHARACTERISTICS b Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Forward Voltage CISS COSS CRSS a Symbol Condition Min Typ Max Unit 250 50 30 1.5 PF PF PF VDS =25V, VGS = 0V f =1.0MHZ 4 VGS = 0V, Is =2A DRAIN-SOURCE DIODE CHARACTERISTICS VSD V Notes a.Pulse Test:Pulse Widthś 300ĳs, Duty Cycle ś 2%. b.Guaranteed by design, not subject to production testing. c. L=60mH, .

CEB02N6_CET.pdf