Part number:
CEB85A3
Manufacturer:
CET
File Size:
313.83 KB
Description:
N-channel mosfet.
* 25V, 90A, RDS(ON) = 6mΩ @VGS = 10V. RDS(ON) = 9mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-263 & TO-220 package. D GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S ABSOLUTE MAXIMU
CEB85A3
CET
313.83 KB
N-channel mosfet.
📁 Related Datasheet
CEB85N75 - N-Channel MOSFET
(CET)
CEP85N75/CEB85N75 CEF85N75
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type CEP85N75 CEB85N75 CEF85N75
VDSS 75V 75V 75V
RDS(ON) 12.
CEB85N75V - N-Channel MOSFET
(CET)
CEP85N75V/CEB85N75V
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
75V, 85A, RDS(ON) = 12mΩ @VGS = 12V. RDS(ON) = 13mΩ @V.
CEB8030 - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Chino-Excel Technology)
.
CEB8030L - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Chino-Excel Technology)
.
CEB8030LA - N-Channel MOSFET
(CET)
CEP8030LA/CEB8030LA
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 75A,RDS(ON) = 6.5mΩ @VGS = 10V. RDS(ON) = 9.0mΩ @VGS = 4.5V.
Su.
CEB803AL - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Chino-Excel Technology)
.
CEB8060 - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Chino-Excel Technology)
.
CEB8060L - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Chino-Excel Technology)
.
