40V, 24A, RDS(ON) = 30mΩ @VGS = 10V. RDS(ON) = 45mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead f
CED4060A, CET
CED4060A/CEU4060A
N-Channel Enhancement Mode Field Effect Transistor FEATURES
60V, 15A, RDS(ON) = 85mΩ @VGS = 10V. Super high dense cell design for ex.
