Datasheet4U Logo Datasheet4U.com

CED4279 Dual MOSFET

CED4279 Description

Dual Enhancement Mode Field Effect Transistor (N and P Channel) CED4279/CEU4279 D1/D2 .

CED4279 Features

* 40V , 14A , RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. -40V , -9A , RDS(ON) = 72mΩ @VGS = 10V. RDS(ON) = 110mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-252-4L package. S1 G1 S2 G2 CEU

📥 Download Datasheet

Preview of CED4279 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
CED4279
Manufacturer
CET
File Size
678.21 KB
Datasheet
CED4279_CET.pdf
Description
Dual MOSFET

📁 Related Datasheet

  • CED4201 - P-Channel MOSFET (Chino-Excel Technology)
  • CED40N10 - N-Channel MOSFET (Chino-Excel Technology)
  • CED01N65 - N-Channel MOSFET (Chino-Excel Technology)
  • CED01N65A - N-Channel MOSFET (Chino-Excel Technology)
  • CED01N6G - N-Channel MOSFET (Chino-Excel Technology)
  • CED01N7 - N-Channel MOSFET (Chino-Excel Technology)
  • CED02N6G - N-Channel MOSFET (Chino-Excel Technology)
  • CED02N7G - N-Channel MOSFET (Chino-Excel Technology)

📌 All Tags

CET CED4279-like datasheet