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CEE02N6A Datasheet - CET

CEE02N6A N-Channel Enhancement Mode Field Effect Transistor

CEE02N6A Features

* 600V, 1.3A, RDS(ON) = 8.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-126 package. D G D S CEE SERIES TO-126 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symb

CEE02N6A-CET.pdf

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Datasheet Details

Part number:

CEE02N6A

Manufacturer:

CET

File Size:

453.19 KB

Description:

N-channel enhancement mode field effect transistor.

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TAGS

CEE02N6A CEE02N6A N-Channel Enhancement Mode Field Effect Transistor CET

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