CEE02N6A - N-Channel Enhancement Mode Field Effect Transistor
CEE02N6A Features
* 600V, 1.3A, RDS(ON) = 8.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-126 package. D G D S CEE SERIES TO-126 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symb
