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CEE02N6G Datasheet - CET

N-Channel Enhancement Mode Field Effect Transistor

CEE02N6G Features

* 600V, 2.0A, RDS(ON) = 5.0Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-126 package. D G CEE SERIES TO-126 S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Lim

CEE02N6G Datasheet (454.03 KB)

Preview of CEE02N6G PDF

Datasheet Details

Part number:

CEE02N6G

Manufacturer:

CET

File Size:

454.03 KB

Description:

N-channel enhancement mode field effect transistor.

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CEE02N6G N-Channel Enhancement Mode Field Effect Transistor CET

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