Datasheet Specifications
- Part number
- CEE02N6G
- Manufacturer
- CET
- File Size
- 454.03 KB
- Datasheet
- CEE02N6G-CET.pdf
- Description
- N-Channel Enhancement Mode Field Effect Transistor
Description
CEE02N6G N-Channel Enhancement Mode Field Effect Transistor .
Features
* 600V, 2.0A, RDS(ON) = 5.0Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-126 package. D G CEE SERIES TO-126 S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol LimCEE02N6G Distributors
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