CEE02N6G Datasheet, Transistor, CET

CEE02N6G Features

• Transistor 600V, 2.0A, RDS(ON) = 5.0Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-126 pack

PDF File Details

Part number:

CEE02N6G

Manufacturer:

CET

File Size:

454.03kb

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📄 Datasheet

Description:

N-channel enhancement mode field effect transistor.

TAGS

CEE02N6G

CET

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