CEK01N6, CET
CEK01N6
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
650V, 0.3A, RDS(ON) = 15 Ω @VGS = 10V. High dense cell design for extremely low R.
CEK01N65, CET
.DataSheet.co.kr
N-Channel Enhancement Mode Field Effect Transistor FEATURES
650V, 0.35A, RDS(ON) = 10.5 Ω @VGS = 10V. High dense cell design for .
CEK01N65A, CET
.DataSheet.co.kr
N-Channel Enhancement Mode Field Effect Transistor FEATURES
650V, 0.3A, RDS(ON) = 15 Ω @VGS = 10V. High dense cell design for ext.
CEK01N6G, CET
.DataSheet.co.kr
N-Channel Enhancement Mode Field Effect Transistor FEATURES
600V, 1A, RDS(ON) = 9.3 Ω @VGS = 10V. High dense cell design for extr.
CEK01N7, CET
CEK01N7
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
700V, 0.3A, RDS(ON) = 18 Ω @VGS = 10V. High dense cell design for extremely low R.
