CEK01N6G - N-Channel Enhancement Mode Field Effect Transistor
CEK01N6G Features
* 600V, 1A, RDS(ON) = 9.3 Ω @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TO-92(Bulk) & TO-92(Ammopack) package. CEK01N6G D G G D G S D TO-92(Ammopack) S TO-92(Bulk) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage
