-40V, -25A, RDS(ON) =42mΩ @VGS = -10V. RDS(ON) =65mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability. Lea
CEP4060A, Chino-Excel Technology
CEP4060A/CEB4060A
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 17A, RDS(ON) = 85mΩ @VGS = 10V. Super high dense cell design for e.
