CEP02N6 Features
* 600V , 2A , RDS(ON)=5Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D G D G G D S S CEB SERIES TO-263(DD-PAK) CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Drain
CEP02N6_Chino-ExcelTechnology.pdf
Datasheet Details
CEP02N6, CEP02N6_Chino
Chino-Excel Technology
45.54 KB
N-channel enhancement mode field effect transistor.
This datasheet PDF includes multiple part numbers: CEP02N6, CEP02N6_Chino.
Please refer to the document for exact specifications by model.
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