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CEP02N6, CEP02N6_Chino Datasheet - Chino-Excel Technology

CEP02N6 N-channel Enhancement Mode Field Effect Transistor

CEP02N6 Features

* 600V , 2A , RDS(ON)=5Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D G D G G D S S CEB SERIES TO-263(DD-PAK) CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Drain

CEP02N6_Chino-ExcelTechnology.pdf

This datasheet PDF includes multiple part numbers: CEP02N6, CEP02N6_Chino. Please refer to the document for exact specifications by model.
CEP02N6 Datasheet Preview Page 2 CEP02N6 Datasheet Preview Page 3

Datasheet Details

Part number:

CEP02N6, CEP02N6_Chino

Manufacturer:

Chino-Excel Technology

File Size:

45.54 KB

Description:

N-channel enhancement mode field effect transistor.

Note:

This datasheet PDF includes multiple part numbers: CEP02N6, CEP02N6_Chino.
Please refer to the document for exact specifications by model.

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TAGS

CEP02N6 CEP02N6_Chino N-channel Enhancement Mode Field Effect Transistor Chino-Excel Technology

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