CEP06N5 Features
* 500V , 6.6A , RDS(ON)=1Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. 4 4 D G D G G D S S CEB SERIES TO-263(DD-PAK) CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Paramete
CEP06N5_Chino-ExcelTechnology.pdf
Datasheet Details
CEP06N5, CEP06N5_Chino
Chino-Excel Technology
41.67 KB
N-channel logic level enhancement mode field effect transistor.
This datasheet PDF includes multiple part numbers: CEP06N5, CEP06N5_Chino.
Please refer to the document for exact specifications by model.
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CEP06N5 Distributor
