CEU4060A Datasheet, Mosfet, CET

CEU4060A Features

• Mosfet 60V, 15A, RDS(ON) = 85mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 pa

PDF File Details

Part number:

CEU4060A

Manufacturer:

CET

File Size:

121.92kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

TAGS

CEU4060A

CET

📁 Related Datasheet

CEU4060AL - N-Channel MOSFET (CET)
CED4060AL/CEU4060AL N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 15A, RDS(ON) = 80mΩ @VGS = 10V. RDS(ON) = 95mΩ @VGS = 5V. Super h.

CEU40N10 - N-Channel MOSFET (Chino-Excel Technology)
N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 37A, RDS(ON) = 32mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(O.

CEU41A2 - N-Channel MOSFET (CET)
CED41A2/CEU41A2 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 36A, RDS(ON) = 20mΩ @VGS = 4.5V. RDS(ON) = 30mΩ @VGS = 2.5V. Super hi.

CEU4201 - P-Channel MOSFET (Chino-Excel Technology)
P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -28A, RDS(ON) = 26mΩ @VGS = -10V. RDS(ON) = 36mΩ @VGS = -4.5V. Super high dense cell.

CEU4204 - N-Channel MOSFET (CET)
N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 24A, RDS(ON) = 30mΩ @VGS = 10V. RDS(ON) = 45mΩ @VGS = 4.5V. Super high dense cell des.

CEU4259 - N-Channel MOSFET (CET)
CEU4259 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V , 14A , RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. -40V , -12A ,.

CEU4269 - Dual Enhancement Mode Field Effect Transistor (CET)
CEU4269 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 40V , 14A , RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. .

CEU4269A - Dual-Channel MOSFET (CET)
CEU4269A Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY FEATURES 40V , 8A , RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ.

CEU4279 - Dual MOSFET (CET)
Dual Enhancement Mode Field Effect Transistor (N and P Channel) CED4279/CEU4279 D1/D2 FEATURES 40V , 14A , RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ.

CEU4301 - P-Channel MOSFET (CET)
CED4301/CEU4301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -20A, RDS(ON) = 42mΩ @VGS = -10V. RDS(ON) = 65mΩ @VGS = -4.5V. Supe.