700V, 0.8A, RDS(ON) = 18 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. T
CEU01N6, CET
CED01N6/CEU01N6
N-Channel Enhancement Mode Field Effect Transistor FEATURES
650V, 0.9A, RDS(ON) = 15 Ω @VGS = 10V. Super high dense cell design for ex.
CEU01N6G, Chino-Excel Technology
N-Channel Enhancement Mode Field Effect Transistor FEATURES
600V, 1A, RDS(ON) = 9.3Ω @VGS = 10V. High power and current handing capability. Lead free .
CEU02N6, CET
CED02N6/CEU02N6
Dec. 2002
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
600V , 1.9A , RDS(ON)=5 Ω @VGS=10V. Super high dens.
CEU02N65A, CET
CED02N65A/CEU02N65A
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
650V, 1.2A, RDS(ON) = 10.5Ω @VGS = 10V. Super high dens.
CEU02N65D, CET
CED02N65D/CEU02N65D
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
650V, 1.8A, RDS(ON) = 6.9 Ω @VGS = 10V. Super high dens.
CEU02N65G, CET
CED02N65G/CEU02N65G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
650V, 1.8A, RDS(ON) = 5.5Ω @VGS = 10V. Super high dense cell design f.
