CEU02N6G
Chino-Excel Technology
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N-channel mosfet.
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CEU02N6 - N-Channel MOSFET
(CET)
CED02N6/CEU02N6
Dec. 2002
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
600V , 1.9A , RDS(ON)=5 Ω @VGS=10V. Super high dens.
CEU02N65A - N-Channel MOSFET
(CET)
CED02N65A/CEU02N65A
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
650V, 1.2A, RDS(ON) = 10.5Ω @VGS = 10V. Super high dens.
CEU02N65D - N-Channel MOSFET
(CET)
CED02N65D/CEU02N65D
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
650V, 1.8A, RDS(ON) = 6.9 Ω @VGS = 10V. Super high dens.
CEU02N65G - N-Channel MOSFET
(CET)
CED02N65G/CEU02N65G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
650V, 1.8A, RDS(ON) = 5.5Ω @VGS = 10V. Super high dense cell design f.
CEU02N6A - N-Channel MOSFET
(CET)
CED02N6A/CEU02N6A
N-Channel Enhancement Mode Field Effect Transistor FEATURES
650V, 1.3A, RDS(ON) = 8 Ω @VGS = 10V. Super high dense cell design for e.
CEU02N7 - N-Channel MOSFET
(CET)
CED02N7/CEU02N7
N-Channel Enhancement Mode Field Effect Transistor FEATURES
700V, 1.6A, RDS(ON) = 6.6Ω @VGS = 10V. Super high dense cell design for ex.
CEU02N7G - N-Channel MOSFET
(Chino-Excel Technology)
N-Channel Enhancement Mode Field Effect Transistor FEATURES
700V, 1.6A, RDS(ON) = 6.75Ω @VGS = 10V. Super high dense cell design for extremely low RDS.
CEU02N7G-1 - N-Channel MOSFET
(CET)
CED02N7G-1/CEU02N7G-1
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
720V, 1.6A, RDS(ON) = 6.75Ω @VGS = 10V. 750V@Tc=150 C Super high de.
CEU02N9 - N-Channel MOSFET
(CET)
CED02N9/CEU02N9
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
900V, 2A, RDS(ON) = 6.8Ω @VGS = 10V. Super high dense cell .
CEU01N6 - N-Channel MOSFET
(CET)
CED01N6/CEU01N6
N-Channel Enhancement Mode Field Effect Transistor FEATURES
650V, 0.9A, RDS(ON) = 15 Ω @VGS = 10V. Super high dense cell design for ex.
