MSL4435A Datasheet | Chip Integration Technology

Features : - Advanced high cell density Trench technology - Excellent Cd V/dt effect decline - Green Device Available 「 Super Low Gate Charge 「 100% EAS Guaranteed Description : The MSL4435A is the high cell density trenched P-ch MOSFETs, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The MSL4435A meet the Ro HS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. BVDSS RDS(ON) ID -30V 20mΩ -7.5A REF. A B C D E F Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current1, @VGS= -10V Pulsed Drain Current2 Total Power Dissipation4 Single Pulse Avalanche Energy3, L=0.1m H Single Pulse Avalanche Current, L=0.1m H Operating Junction and Storage Temperature Range VDS VGS ID @TA=25℃ ID @TA=70℃ IDM PD @TA=25℃ PD @TA=70℃ EAS IAS TJ,...