MSL4435A P-Channel Enhancement Mode MOSFET

CITC

Description

MSL4435A Chip Integration Technology Corporation P-Channel ENHANCEMENT MODE POWER MOSFET .
The MSL4435A is the high cell density trenched P-ch MOSFETs, which provide excellent RDS(ON) and gate charge for most of the synchronous buck convert.

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Datasheet Specifications

Part number: MSL4435A
Manufacturer: CITC
File Size: 399.39 KB
Datasheet: MSL4435A-CITC.pdf
Description: P-Channel Enhancement Mode MOSFET

Features

* Advanced high cell density Trench technology
* Excellent CdV/dt eﬀect decline

Applications

* The MSL4435A meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. BVDSS RDS(ON) ID -30V 20mΩ -7.5A REF. A B C D E F Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current1, @VGS= -10V Pul

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📁 Related Datasheet

MSL-154B MSL-154BV MSL-154DR MSL-154G MSL-154HG MSL-154HR

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MSL4435A P-Channel Enhancement Mode MOSFET CITC

CITC MSL4435A-like datasheet