MSQ108N06G Datasheet - CITC

MSQ108N06G N-Channel Enhancement Mode MOSFET

DDDD SS SG DFN5x6-8 (5,6,7,8) DD DD Pin 1 (4) G * Absolute Maximum Ratings (TA = 25OC unless otherwise specified) PARAMETER CONDITIONS Drain-Source Voltage Continuous Drain Current Pulsed Drain Current(Note:1) Gate-Source Voltage TC = 25OC TC = 100OC TC = 25OC Diode Continuous Forward C.

MSQ108N06G Features

* 60V/50A RDS(ON) = 10.8mΩ (max.) @ VGS= 10V RDS(ON) = 13.5mΩ (max.) @ VGS= 4.5V

* Reliable and Rugged.

* Lead free and green device available (RoHS compliant).

* Application

* Secondary side synchronous rectification.

* DC-DC converter.

* Motor co

MSQ108N06G Datasheet (791.93 KB)

MSQ108N06G Datasheet Preview — Preview of MSQ108N06G PDF

Datasheet Details

Part number:

MSQ108N06G

Manufacturer:

CITC

File Size:

791.93 KB

Description:

N-channel enhancement mode mosfet.

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MSQ108N06G N-Channel Enhancement Mode MOSFET CITC

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