MSQ175N10G
MSQ175N10G is N-Channel Enhancement Mode MOSFET manufactured by Chip Integration Technology.
Features
- 100V/52A RDS(ON) = 17.5mΩ (max.) @ VGS= 10V
- Reliable and Rugged.
- Lead free and green device available
(Ro HS pliant).
- Application
- DC-DC converter.
- Motor control.
N-Channel Enhancement Mode MOSFET
- Pin Description
DDDD
SS SG
DFN5x6-8
(5,6,7,8) DD DD
Pin 1
(4) G
- Absolute Maximum Ratings (TA = 25OC unless otherwise specified)
PARAMETER
CONDITIONS
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current(Note:1) Gate-Source Voltage
TC = 25OC TC = 100OC TC = 25OC
Diode Continuous Forward Current Avalanche Current, single pulse (Note:2)
TC = 25OC L=0.5m H
Avalanche Energy, single pulse (Note:2)
L=0.5m H
Maximum Power Dissipation
TC = 25OC TC = 100OC
Thermal Resistance-Junction to Ambient(Note:3) t ≤ 10s Steady State
Operating and Storage Temperature Range
Maximum Power Dissipation
Continuous Drain Current Thermal Resistance-Junction to case(Note:3)
TA = 25OC TA = 70OC TA = 25OC TA = 70OC
NOTE :...