MSQ108N06G Datasheet | Chip Integration Technology

Features - 60V/50A RDS(ON) = 10.8mΩ (max.) @ VGS= 10V RDS(ON) = 13.5mΩ (max.) @ VGS= 4.5V - Reliable and Rugged. - Lead free and green device available (Ro HS pliant). - Application - Secondary side synchronous rectification. - DC-DC converter. - Motor control. - Load Switching. N-Channel Enhancement Mode MOSFET - Pin Description DDDD SS SG DFN5x6-8 (5,6,7,8) DD DD Pin 1 (4) G - Absolute Maximum Ratings (TA = 25OC unless otherwise specified) PARAMETER CONDITIONS Drain-Source Voltage Continuous Drain Current Pulsed Drain Current(Note:1) Gate-Source Voltage TC = 25OC TC = 100OC TC = 25OC Diode Continuous Forward Current Avalanche Current, single pulse (Note:2) TC = 25OC L=0.5m H Avalanche Energy, single pulse (Note:2) L=0.5m H Maximum Power Dissipation Thermal Resistance-Junction to Ambient(Note:3) TC = 25OC TC = 100OC t ≤ 10s Steady State Operating and Storage Temperature Range Maximum Power Dissipation Continuous Drain Current...