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MSQ108N06G - N-Channel Enhancement Mode MOSFET

General Description

DDDD SS SG DFN5x6-8 (5,6,7,8) DD DD Pin 1 (4) G Absolute Maximum Ratings (TA = 25OC unless otherwise specified) PARAMETER CONDITIONS Drain-Source Voltage Continuous Drain Current Pulsed Drain Current(Note:1) Gate-Source Voltage TC = 25OC TC = 100OC TC = 25OC Diode Continuous Forward C

Key Features

  • s.
  • 60V/50A RDS(ON) = 10.8mΩ (max. ) @ VGS= 10V RDS(ON) = 13.5mΩ (max. ) @ VGS= 4.5V.
  • Reliable and Rugged.
  • Lead free and green device available (RoHS compliant).

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Datasheet Details

Part number MSQ108N06G
Manufacturer CITC
File Size 791.93 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet MSQ108N06G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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■ Features • 60V/50A RDS(ON) = 10.8mΩ (max.) @ VGS= 10V RDS(ON) = 13.5mΩ (max.) @ VGS= 4.5V • Reliable and Rugged. • Lead free and green device available (RoHS compliant). ■ Application • Secondary side synchronous rectification. • DC-DC converter. • Motor control. • Load Switching. MSQ108N06G N-Channel Enhancement Mode MOSFET ■ Pin Description DDDD SS SG DFN5x6-8 (5,6,7,8) DD DD Pin 1 (4) G ■ Absolute Maximum Ratings (TA = 25OC unless otherwise specified) PARAMETER CONDITIONS Drain-Source Voltage Continuous Drain Current Pulsed Drain Current(Note:1) Gate-Source Voltage TC = 25OC TC = 100OC TC = 25OC Diode Continuous Forward Current Avalanche Current, single pulse (Note:2) TC = 25OC L=0.5mH Avalanche Energy, single pulse (Note:2) L=0.