CRTM024N03L2-G Datasheet - CR Micro

CRTM024N03L2-G - Silicon N-Channel Power MOSFET

CRTM024N03L2-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device can VDSS ID（Silicon limited current） ID（Package limited current） PD RDS(ON)Typ .

CRTM024N03L2-G Features

* Fast Switching

* Low ON Resistance(Rdson≤2.2mΩ)

* Low Gate Charge

* Low Reverse transfer capacitances

* 100% Single Pulse avalanche energy Test

* Halogen Free Applications： load switch and power switch applications. Absolute（Tj= 25℃ unless otherwise specified） Sym

CRTM024N03L2-G-CRMicro.pdf