CS5R50C4RDP-G Datasheet - CR Micro

CS5R50C4RDP-G Silicon N-Channel Power MOSFET

CS5R50 C4RDP-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and .

CS5R50C4RDP-G Features

* Fast Switching

* Low ON Resistance(Rdson≤2.0Ω)

* Low Gate Charge (Typical Data:14.9nC)

* Low Reverse transfer capacitances(Typical: 1.9pF)

* 100% Single Pulse avalanche energy Test

* Halogen Free VDSS ID PD(TC=25℃) RDS(ON)Typ 500 V 5 A 57 W 1.6 Ω Applications： M

CS5R50C4RDP-G-CRMicro.pdf