CS5R50C4RDP-G - Silicon N-Channel Power MOSFET
CS5R50 C4RDP-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and
CS5R50C4RDP-G Features
* Fast Switching
* Low ON Resistance(Rdson≤2.0Ω)
* Low Gate Charge (Typical Data:14.9nC)
* Low Reverse transfer capacitances(Typical: 1.9pF)
* 100% Single Pulse avalanche energy Test
* Halogen Free VDSS ID PD(TC=25℃) RDS(ON)Typ 500 V 5 A 57 W 1.6 Ω Applications： M
