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CS50N065A4 Datasheet - CR Micro

CS50N065A4 Silicon N-Channel Power MOSFET

CS50N065 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. .

CS50N065A4 Features

* l Fast Switching l Low ON Resistance(Rdson≤17 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. 65 V 50 A 82 W 12.8 mΩ Absolute（Tj= 25℃ unless otherwise specified） Symbol Parameter VDS

CS50N065A4-CRMicro.pdf

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Datasheet Details

Part number:

CS50N065A4

Manufacturer:

CR Micro

File Size:

523.01 KB

Description:

Silicon n-channel power mosfet.

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CS50N065A4 CS50N065A4 Silicon N-Channel Power MOSFET CR Micro

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