HGE090N06A Silicon N-Channel Power MOSFET

CR Micro

Description

Silicon N-Channel Power MOSFET ○R HGE090N06A General .
VDSS 60 V HGE090N06A, the silicon N-channel Enhanced VDMOSFETs, ID 14 A is obtained by the high density Trench technology which reduce PD(Ta=2.

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Datasheet Specifications

Part number: HGE090N06A
Manufacturer: CR Micro
File Size: 788.82 KB
Datasheet: HGE090N06A-CRMicro.pdf
Description: Silicon N-Channel Power MOSFET

Features

* Fast Switching
* Low ON Resistance
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Test

Applications

* Power switch circuit of adaptor and charger.
* Synchronus Rectification in DC/DC Converters Absolute（TA= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 PD TJ，Tstg Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TA = 100 °C Pulsed D

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HGE090N06A Silicon N-Channel Power MOSFET CR Micro

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