HGE090N06A Datasheet - CR Micro

HGE090N06A Silicon N-Channel Power MOSFET

VDSS 60 V HGE090N06A, the silicon N-channel Enhanced VDMOSFETs, ID 14 A is obtained by the high density Trench technology which reduce PD(Ta=25℃) 3.1 W the conduction loss, improve switching performance and enhance RDS(ON) Typ@Vgs=10V 8.5 mΩ the avalanche energy. The transistor can be u.

HGE090N06A Features

* Fast Switching

* Low ON Resistance

* Low Gate Charge

* Low Reverse transfer capacitances

* 100% Single Pulse avalanche energy Test

* Halogen Free Applications：

* Power switch circuit of adaptor and charger.

* Synchronus Rectification in DC/DC Converters Abso

HGE090N06A-CRMicro.pdf

HGE090N06A Datasheet Preview — Preview of HGE090N06A PDF

Datasheet Details

Part number:

HGE090N06A

Manufacturer:

CR Micro

File Size:

788.82 KB

Description:

Silicon n-channel power mosfet.

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HGE090N06A HGE090N06A Silicon N-Channel Power MOSFET CR Micro

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