HGE090N06A - Silicon N-Channel Power MOSFET
VDSS 60 V HGE090N06A, the silicon N-channel Enhanced VDMOSFETs, ID 14 A is obtained by the high density Trench technology which reduce PD(Ta=25℃) 3.1 W the conduction loss, improve switching performance and enhance RDS(ON) Typ@Vgs=10V 8.5 mΩ the avalanche energy.
The transistor can be u
HGE090N06A Features
* Fast Switching
* Low ON Resistance
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Test
* Halogen Free Applications：
* Power switch circuit of adaptor and charger.
* Synchronus Rectification in DC/DC Converters Abso
