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Silicon N-Channel Power MOSFET
○R
HGE055NE4A
General Description：
VDSS
45
V
HGE055NE4A, the silicon N-channel Enhanced ID
18
A
VDMOSFETs, is obtained by the high density Trench technology PD(Ta=25℃)
3.1
W
which reduce the conduction loss, improve switching RDS(ON) Typ@Vgs=10V 4.4
mΩ
performance and enhance the avalanche energy. The transistor
RDS(ON) Typ@Vgs=4.5V
6.5
mΩ
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is SOP8,
which accords with the RoHS standard.
Features：
Fast Switching
Low ON Resistance(Rdson≤5.5mΩ)
Low Gate Charge
Low Reverse transfer capacitances
100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
HGE055NE4A Datasheet
