HGE055NE4A Overview
： VDSS 45 V HGE055NE4A, the silicon N-channel Enhanced ID 18 A VDMOSFETs, is obtained by the high density Trench technology PD(Ta=25℃) 3.1 W which reduce the conduction loss, improve switching RDS(ON) Typ@Vgs=10V 4.4 mΩ performance and enhance the avalanche energy. The transistor RDS(ON) Typ@Vgs=4.5V 6.5 mΩ can be used in various power switching circuit for system miniaturization and higher efficiency. The package...
HGE055NE4A Key Features
- Fast Switching
- Low ON Resistance(Rdson≤5.5mΩ)
- Low Gate Charge
- Low Reverse transfer capacitances
- 100% Single Pulse avalanche energy Test