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HGU09N06A Datasheet - CR Micro

HGU09N06A Silicon N-Channel Power MOSFET

HGU09N06A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-251,.

HGU09N06A Features

* Fast Switching

* Low ON Resistance(Rdson≤9.8mΩ)

* Low Gate Charge

* Low Reverse transfer capacitances

* 100% Single Pulse avalanche energy Test

* Halogen Free Applications： Power switch circuit of adaptor and charger. E-cigarette,Electric Tool Absolute（Tj= 25℃ unless other

HGU09N06A-CRMicro.pdf

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Datasheet Details

Part number:

HGU09N06A

Manufacturer:

CR Micro

File Size:

785.63 KB

Description:

Silicon n-channel power mosfet.

HGU09N06A Distributor

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HGU09N06A HGU09N06A Silicon N-Channel Power MOSFET CR Micro