HGU09N06A-G Silicon N-Channel Power MOSFET

CR Micro

Description

Silicon N-Channel Power MOSFET ○R HGU09N06A-G General .
HGU09N06A-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve sw.

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Datasheet Specifications

Part number: HGU09N06A-G
Manufacturer: CR Micro
File Size: 777.66 KB
Datasheet: HGU09N06A-G-CRMicro.pdf
Description: Silicon N-Channel Power MOSFET

Features

* Fast Switching
* Low ON Resistance(Rdson≤9.8mΩ)
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Test

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HGU09N06A-G Silicon N-Channel Power MOSFET CR Micro

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