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E4D20120G Silicon Carbide Schottky Diode

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Description

E4D20120G Silicon Carbide Schottky Diode E-Series Automotive .

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Datasheet Specifications

Part number
E4D20120G
Manufacturer
CREE
File Size
2.74 MB
Datasheet
E4D20120G-CREE.pdf
Description
Silicon Carbide Schottky Diode

Features

* Package
* 4th Generation SiC Merged PIN Schottky Technology
* Zero Reverse Recovery Current
* High-Frequency Operation
* Temperature-Independent Switching Behavior
* AEC-Q101 Qualified and PPAP Capable
* Humidity Resistant Benefits TO-263-2

Applications

* Boost diodes in PFC or DC/DC stages
* Free Wheeling Diodes in Inverter stages
* AC/DC converters
* Automotive and Traction Power Conversion
* PV Inverters Part Number E4D20120G VDS ID @ 25˚C RDS(on) 900 V 11.5 A 280 mΩ CASE Package TO-263-2 Marking E4D

E4D20120G Distributors

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