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E4D20120G - Silicon Carbide Schottky Diode

CREE

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Datasheet Details

Part number	E4D20120G
Manufacturer	CREE
File Size	2.74 MB
Description	Silicon Carbide Schottky Diode
Datasheet	E4D20120G-CREE.pdf

E4D20120G Product details

Features

Package.
4th Generation SiC Merged PIN Schottky Technology.
Zero Reverse Recovery Current.
High-Frequency Operation.
Temperature-Independent Switching Behavior.
AEC-Q101 Qualified and PPAP Capable.
Humidity Resistant Benefits TO-263-2.
Replace Bipolar with Unipolar Rectifiers.
Essentially No Switching Losses.
Higher Efficiency.
Reduction of Heat Sink Requirements.
Parallel Devices Without Ther.

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Published: Jul 30, 2025 |