E4D02120E Datasheet (Wolfspeed) - Silicon Carbide Schottky Diode

E4D02120E, Silicon Carbide Schottky Diode

With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities.

SiC diodes can be easily paralleled to meet various applica

E4D02120E Features

* Low Forward Voltage (VF) Drop with Positive Temperature Coefficient

* Zero Reverse Recovery Current / Forward Recovery Voltage

* Temperature-Independent Switching Behavior

* AEC-Q101 + HV-H3TRB Qualified, PPAP Capable Applications

* Bootstrap Diode