Datasheet4U.com

E4D20120G - 20A Silicon Carbide Schottky Diode

Wolfspeed

📥 Download Datasheet

E4D20120G Datasheet Preview — Preview of E4D20120G PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	E4D20120G
Manufacturer	Wolfspeed
File Size	726.84 KB
Description	20A Silicon Carbide Schottky Diode
Datasheet	E4D20120G-Wolfspeed.pdf

E4D20120G Product details

Features

4th generation SiC merged PIN Schottky technology.
Zero reverse recovery current.
High-frequency operation.
Temperature-independent switching behavior.
AEC-Q101 qualified and PPAP capable.
Humidity resistant TO-263-2 Package Types: TO-263-2 PN: E4D20120G Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc. During this transition period, pro.

📁 E4D20120G Similar Datasheet

E4D20120A - Silicon Carbide Schottky Diode (CREE)
E4D10120A - Silicon Carbide Schottky Diode (CREE)

Other Datasheets by Wolfspeed

E4D20120D - Silicon Carbide Power MOSFET
E4D02120E - Silicon Carbide Schottky Diode

Published: Dec 13, 2024 |