Datasheet Details
| Part number | E4D02120E |
|---|---|
| Manufacturer | Wolfspeed |
| File Size | 709.40 KB |
| Description | Silicon Carbide Schottky Diode |
| Datasheet |
 E4D02120E Datasheet
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General Description
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities.
Key Features
- Low Forward Voltage (VF) Drop with Positive Temperature Coefficient.
- Zero Reverse Recovery Current / Forward Recovery Voltage.
- Temperature-Independent Switching Behavior.
- AEC-Q101 + HV-H3TRB Qualified, PPAP Capable.