E4D02120E Overview
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In bination with the reduced cooling requirements and improved...
E4D02120E Key Features
- Low Forward Voltage (VF) Drop with Positive
- Zero Reverse Recovery Current / Forward
- Temperature-Independent Switching Behavior
- AEC-Q101 + HV-H3TRB Qualified, PPAP Capable
E4D02120E Applications
- Low Forward Voltage (VF) Drop with Positive